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(a) The device structure and energy diagram under reverse bias of P3HT and PCBM bulk heterojunction. The electron affinity and ionization potential are given in eV. (b) The absorption spectrum of pure P3HT and P3HT:PCBM blend at different baking and vacuum conditions. (c) The absorption spectra of P3HT:PCBM and the incident photon to current conversion efficiency (IPCE) of the device of , the active layer is .
(a) The lamp power density of quartz-tungsten-halogen lamp and the current density of ITO/PEDOT/P3HT:PCBM under 0, , and reverse biases as functions of the incident photon wavelength. (b) The IPCE of ITO/PEDOT/P3HT:PCBM under 0, , and biases.
(a) The photocurrent density and dark current density of the photodetector ITO/PEDOT/P3HT:PCBM at 600 and . (b) The current ratio of ITO/PEDOT/P3HT:PCBM at excitation wavelength under reverse biases.
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