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Influence of capping layer and atomic interdiffusion on the strain distribution in single and double self-assembled quantum dots
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10.1063/1.2841065
/content/aip/journal/apl/92/8/10.1063/1.2841065
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2841065

Figures

Image of FIG. 1.
FIG. 1.

A sketch of the atom positions in the individual InAs QD. Left: a surface QD; middle: buried; right: partially capped.

Image of FIG. 2.
FIG. 2.

(a) Strain profiles along the axis in the QD system for different CL thicknesses. The solid, dashed, dash-dotted, and dotted curves correspond to the cases with the CL thicknesses of , , , and infinity, respectively. Here, is the lattice constant of GaAs. (b) Strain profiles along the axis in the QD system with the capping materials having a fixed thickness of . The solid, dashed, and dotted curves correspond to the cases with the uniform InAs compositions of , 0.4, and 1, respectively. The base length and height of the QD are and , respectively.

Image of FIG. 3.
FIG. 3.

(a) Strain profiles along the axis in the stacked QD system with the GaAs CL thickness of for different SL thicknesses. The dashed, dotted, and solid curves correspond to the cases with the SL thicknesses of , , and infinity, respectively. (b) Strain profiles along the axis in the stacked QD system with the SL thickness of for different CL thicknesses. The solid, dashed, dash-dotted, and dotted curves correspond to the cases with the CL thicknesses of , , , and infinity, respectively. Other QD parameters are the same as before.

Image of FIG. 4.
FIG. 4.

Contour plot of the hydrostatic strains on the plane in the stacked QD system without (left plot) and with (right plot) composition intermixing. The diffusion length is chosen to be equal to the thickness of the SL. Other QD parameters are the same as before.

Tables

Generic image for table
Table I.

Material parameters used in the present calculations (Ref. 18).

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/content/aip/journal/apl/92/8/10.1063/1.2841065
2008-02-29
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of capping layer and atomic interdiffusion on the strain distribution in single and double self-assembled InAs∕GaAs quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2841065
10.1063/1.2841065
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