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(a) High voltage filled states image showing the four QD layers. The thin GaAs interlayers appear dark due to the tensile strain. (b) Relaxation profile across four QD layers in a region without QDs. The profile is extracted from a high voltage image .
(a) High voltage filled states image of the GaAs interlayer in a region without QDs in the L4 layer (1.5 ML GaAs). (b) Low voltage filled states image of the WL in the L2 layer (0.5 ML GaAs).
(a) Average QD height (squares) and base length (triangles) as a function of the thickness of the GaAs interlayer. (b) Total area of all the QDs found after scanning in each layer as a function of the thickness of the GaAs interlayer. The lines are guides for the eye.
Filled state image of a representative QD in each layer. The dark spots inside the nanostructures indicate the presence of P atoms.
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