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Influence of an ultrathin GaAs interlayer on the structural properties of (001) quantum dots investigated by cross-sectional scanning tunneling microscopy
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10.1063/1.2884692
/content/aip/journal/apl/92/8/10.1063/1.2884692
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2884692
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) High voltage filled states image showing the four QD layers. The thin GaAs interlayers appear dark due to the tensile strain. (b) Relaxation profile across four QD layers in a region without QDs. The profile is extracted from a high voltage image .

Image of FIG. 2.
FIG. 2.

(a) High voltage filled states image of the GaAs interlayer in a region without QDs in the L4 layer (1.5 ML GaAs). (b) Low voltage filled states image of the WL in the L2 layer (0.5 ML GaAs).

Image of FIG. 3.
FIG. 3.

(a) Average QD height (squares) and base length (triangles) as a function of the thickness of the GaAs interlayer. (b) Total area of all the QDs found after scanning in each layer as a function of the thickness of the GaAs interlayer. The lines are guides for the eye.

Image of FIG. 4.
FIG. 4.

Filled state image of a representative QD in each layer. The dark spots inside the nanostructures indicate the presence of P atoms.

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/content/aip/journal/apl/92/8/10.1063/1.2884692
2008-02-25
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of an ultrathin GaAs interlayer on the structural properties of InAs∕InGaAsP∕InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2884692
10.1063/1.2884692
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