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Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing
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10.1063/1.2885091
/content/aip/journal/apl/92/8/10.1063/1.2885091
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2885091
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Electrically active boron density of a , boron implant into preamorphized silicon (a) as a function of laser scans and Ge PAI energy and (b) for the 2, 5, and Ge PAI conditions after laser annealing with one scan and postlaser annealing.

Image of FIG. 2.
FIG. 2.

Boron SIMS profiles and sheet resistances after laser annealing with (a) one scan and (b) ten scans for the three Ge PAI conditions, showing the corresponding positions of the interface after implantation (dashed vertical lines).

Image of FIG. 3.
FIG. 3.

Plan-view TEM images in Weak Beam Dark Field condition with and slightly positive. (a) and (b) correspond to sample preamorphized with Ge at and laser annealed with one and ten scans. (c) and (d) corresponds to Ge at , one and ten scans.

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/content/aip/journal/apl/92/8/10.1063/1.2885091
2008-02-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2885091
10.1063/1.2885091
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