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High temperature resistance of small diameter, metallic single-walled carbon nanotube devices
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10.1063/1.2885092
/content/aip/journal/apl/92/8/10.1063/1.2885092
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2885092

Figures

Image of FIG. 1.
FIG. 1.

Heat treatment of two Pd-contacted samples. The points represent the measurements while the lines serve as a guide to the eye. (a) Temperature dependence of the resistance of sample Pd-A. The arrows indicate heating and cooling directions. The device was previously annealed ex situ at . Insets: as Pd-A was annealed above , and a scanning electron micrograph of the connecting Pd electrodes afterwards. (b) The resistance (red, left axis) of sample Pd-B as the temperature (blue, right axis) was increased in steps of in a step/soak pattern. (c) for Pd-B post-anneal and a linear fit.

Image of FIG. 2.
FIG. 2.

Heat treatment of two Ti-contacted devices. The numbers and arrows indicate the time sequence of the traces and the heating and cooling directions. The points represent data and the lines are provided as a guide to the eyes. (a) Sample Ti-A was annealed at a temperature of and then cooled to room temperature. (b) Sample Ti-B was annealed at temperatures of 450, 600, and .

Tables

Generic image for table
Table I.

Summary of samples discussed. The gate sensitivity denotes the percent variation in resistance for gate voltages between and . Initial denotes the samples’ resistance preanneal measured in situ at room temperature, and final is postanneal. is the constant slope of postanneal.

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/content/aip/journal/apl/92/8/10.1063/1.2885092
2008-02-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High temperature resistance of small diameter, metallic single-walled carbon nanotube devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2885092
10.1063/1.2885092
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