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Two-dimensional RSMs around (224) reflection of Si in sSOI water measured at two different azimuthal positions of (a) and (b) .
Raman spectrum taken from sSOI wafer. The Lorentzian curve fitting clearly resolves the two Si phonon modes corresponding to strained Si film and bulk Si substrate in sSOI wafer. The inset represents the Raman spectrum in wider spectral range.
characteristics of (a) sSOI and (b) SOI samples and characteristics of (c) sSOI and (d) SOI samples.
Plot of effective carrier mobility extracted from sSOI and SOI sample as a function of gate voltage.
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