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Characterization of electrical and structural properties of strained-Si-on-insulator layers
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10.1063/1.2885726
/content/aip/journal/apl/92/8/10.1063/1.2885726
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2885726
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Two-dimensional RSMs around (224) reflection of Si in sSOI water measured at two different azimuthal positions of (a) and (b) .

Image of FIG. 2.
FIG. 2.

Raman spectrum taken from sSOI wafer. The Lorentzian curve fitting clearly resolves the two Si phonon modes corresponding to strained Si film and bulk Si substrate in sSOI wafer. The inset represents the Raman spectrum in wider spectral range.

Image of FIG. 3.
FIG. 3.

characteristics of (a) sSOI and (b) SOI samples and characteristics of (c) sSOI and (d) SOI samples.

Image of FIG. 4.
FIG. 4.

Plot of effective carrier mobility extracted from sSOI and SOI sample as a function of gate voltage.

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/content/aip/journal/apl/92/8/10.1063/1.2885726
2008-02-28
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of electrical and structural properties of strained-Si-on-insulator layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2885726
10.1063/1.2885726
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