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Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors
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10.1063/1.2887882
/content/aip/journal/apl/92/8/10.1063/1.2887882
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2887882
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic cross section of the fabricated -channel nc-Si:H TFTs. (b) Transfer and gate leakage characteristics of the -channel nc-Si:H TFT with at and .

Image of FIG. 2.
FIG. 2.

Temperature dependence of : (a) Arrhenius plot of at for different (along with the extracted values), a: , , b: , , c: , , d: , , e: , , and f: , . (b) Dependence of on at and .

Image of FIG. 3.
FIG. 3.

vs at for the fabricated TFT.

Image of FIG. 4.
FIG. 4.

Dependence of on various with a fixed for different , , and .

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/content/aip/journal/apl/92/8/10.1063/1.2887882
2008-02-28
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2887882
10.1063/1.2887882
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