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Fringing field effects on electrical resistivity of semiconductor nanowire-metal contacts
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10.1063/1.2889534
/content/aip/journal/apl/92/8/10.1063/1.2889534
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2889534
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Contact geometries studied in the paper (a) NW-3D metal contact, (b) NW-1D metal contact, (c) planar contact. (d) shows simulated energy band diagrams for different contact geometries.

Image of FIG. 2.
FIG. 2.

Contact resistivity vs NW radius for different contact geometries at temperatures equal to 91 and , respectively. The inset shows the depletion width vs NW radius.

Image of FIG. 3.
FIG. 3.

Longitudinal electric field in the radial direction (distance normalized by wire radius) for different NW radii: and .

Image of FIG. 4.
FIG. 4.

Contact resistivity vs temperature for different values of Schottky barrier height . Wire radius is for NW-metal contacts.

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/content/aip/journal/apl/92/8/10.1063/1.2889534
2008-02-27
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fringing field effects on electrical resistivity of semiconductor nanowire-metal contacts
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/8/10.1063/1.2889534
10.1063/1.2889534
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