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Polymer hot-carrier transistor with low bandgap emitter
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/content/aip/journal/apl/92/9/10.1063/1.2839395
2008-03-07
2014-08-22

Abstract

Vertical polymer hot-carrier transistor using the low bandgap material poly(3-hexylthiophene) as both the emitter and the collector are studied. The common emitter current gain is shown to depend on the LiF thickness and the emitter thickness, with maximal value at 31. Current density as high as is achieved when collector voltage is . For the device using blend of poly(3-hexylthiophene) and high bandgap polymer poly(9-vinylcarbazole) as the emitter, the current density rises sharply to . The brightness of is obtained as a polymer light-emitting diode is driven by the transistor with the same area. The transistor can be operated at .

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polymer hot-carrier transistor with low bandgap emitter
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/9/10.1063/1.2839395
10.1063/1.2839395
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