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Polymer hot-carrier transistor with low bandgap emitter
6.M. Yi, S. Yu, C. Feng, T. Zhang, D. Ma, M. S. Meruvia, and I. A. Hümmelgen, Org. Electron. 8, 311 (2007).
10.S. E. Shaheen, G. E. Jabbour, M. M. Morrell, Y. Kawabe, B. Kippelen, N. Peyghambarian, M. F. Nabor, R. Schlaf, E. A. Mash, and N. R. Armstrong, J. Appl. Phys. 84, 2324 (1998).
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Vertical polymer hot-carrier transistor using the low bandgap material poly(3-hexylthiophene) as both the emitter and the collector are studied. The common emitter current gain is shown to depend on the LiF thickness and the emitter thickness, with maximal value at 31. Current density as high as is achieved when collector voltage is . For the device using blend of poly(3-hexylthiophene) and high bandgap polymer poly(9-vinylcarbazole) as the emitter, the current density rises sharply to . The brightness of is obtained as a polymer light-emitting diode is driven by the transistor with the same area. The transistor can be operated at .
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