Full text loading...
(a) characteristics at for with different HfSiON dopants. (b) Dopant type significantly affects . Maximum tuning of for SrO and minimum , tuning of for Sc. Similar transfer characteristics are observed for both and gate lengths (not shown).
After spike anneal, FTIR RE–O–Si intensity increases for RE doped stacks while intensity decreases simultaneously. The inset shows a doped HfSiON sample before and after the annealing. RE dopants diffuse to the high-/low- interface enabling an interfacial dipole.
(a) Median varies with dopant EN (proportional to ) affecting the dipole moment . (inset) Median varies with dopant radii (proportional to ), affecting the dipole moment .
Interface dipole moment model. EWF shift (▵) is proportional to dipole moment due to the charge transfer in the Hf-O-RE configuration. The dipole moment magnitude varies with dopant type explaining the dependence on dopant type in Fig. 1.
Article metrics loading...