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Process flow of our scheme for InP layer transfer: (a) heterostructure growth using MOCVD, (b) ion implantation (dotted line indicates the projected range of the hydrogen implant), (c) wafer bonding of implanted heterostructure with a piece, (d) layer exfoliation induced by a thermal annealing, and (e) selective etching on both sides.
Cross-sectional TEM images of (a) as-grown sample, (b) hydrogen implanted and annealed sample, and (c) a TRIM simulated hydrogen ion distribution profile.
X-ray diffraction data from (a) as-grown sub, (b) as-implanted sub, (c) as-transferred sub, (d) annealed sub, (e) after first etch, sub, and (f) after further etch, sub.
Three-dimensional view AFM image of (a) as-grown top InP surface of heterostructure (see the structure in [Fig. 1(a)], (b) as-transferred InGaAs surface [see Fig. 1(d)], and (c) InP surface after the selective etch [see the structure in Fig. 1(e)].
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