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Room temperature magnetoresistance switching of Permalloy thin films induced by iron nanoparticles
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View: Figures


Image of FIG. 1.
FIG. 1.

Left: scanning electron microscope (SEM) pictures of typical arrays of Fe magnetic nanoparticles grown by STM-assisted CVD onto Nb (top) and Au (bottom) substrates. Right: schematics (not to scale) of the Fe-nanoparticle/Py-thin-film hybrid structures with dimensions for devices A (B). Magnetic field and electrical current are applied along the and directions, respectively.

Image of FIG. 2.
FIG. 2.

(a) Magnetoresistance of device A at for fields applied perpendicular to the plane of Py film. The Fe-nanoparticle array is of rectangular shape ( particles, spaced apart). (b) Relative change in MR after the background [dashed line in (a)] has been subtracted. (c) Calculated component of this particular particle array’s stray field below the array.

Image of FIG. 3.
FIG. 3.

MR curves of device B ( array, interparticle distance ) taken at different temperatures (background subtracted, magnetic field perpendicular to the Py film). Inset: AFM of the Fe-nanoparticle array from which particle heights and positions were taken.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the maximum and minimum switching fields in MR (left) and the magnitude of the relative resistance change (right) for devices A and B. Lines are guide to the eyes.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature magnetoresistance switching of Permalloy thin films induced by iron nanoparticles