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Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation
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10.1063/1.2891063
/content/aip/journal/apl/92/9/10.1063/1.2891063
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/9/10.1063/1.2891063
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of the measured coupled silicon dots device. Scale bar is . (b) Zoomed-in SEM image of the dual recess region and the possible locations of dots. Scale bar is .

Image of FIG. 2.
FIG. 2.

Measured drain current magnitude as a function of gate G1 and drain voltages at . Gates G2 and G3 were kept grounded. The gray scale plot runs from the minimum current (white) to the maximum current (black) at .

Image of FIG. 3.
FIG. 3.

(a) Contour plot of the drain current as a function of and at for the drain voltage value of . The gray scale plot runs from the minimum current (white) to the maximum current (black) at . (b) Contour plot of the drain current as a function of and at for the drain voltage value of . The gray scale plot runs from the minimum current (white) to the maximum current (black) .

Image of FIG. 4.
FIG. 4.

[(a) and (b)] Drain current as a function of for various temperatures. (c) Conductance for a maximum (, and ) and a minimum (, and ) in the transport characteristics on a semilogarithmic scale. (d) The number of peaks counts for various temperatures, , , and from .

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/content/aip/journal/apl/92/9/10.1063/1.2891063
2008-03-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/9/10.1063/1.2891063
10.1063/1.2891063
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