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Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistors
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/content/aip/journal/apl/93/1/10.1063/1.2949320
2008-07-08
2014-11-24

Abstract

We report on solution-processible high permittivitynanocomposite gate insulators based on nanoparticles, surface-modified with a phosphonic acid, in poly(4-vinylphenol) for organic field-effect transistors. The use of surface-modified nanoparticles affords high quality nanocomposite thin films at large nanoparticle volume fractions (up to ) with a large capacitance density and a low leakage current. The fabricated pentacene field-effect transistors using these nanocomposites show a large on/off current ratio ( ) due to the high capacitance density and small leakage current of the gate insulator.

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Scitation: Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/1/10.1063/1.2949320
10.1063/1.2949320
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