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Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistors
1.A. Maliakal, in Dielectric Materials: Selection and Design, edited by Z. Bao and J. Locklin (CRC, Boca Raton, 2007), p. 229.
17.Due to the residual hydroxyl groups present in PVP, it may not be applicable to -type semiconductors.
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We report on solution-processible high permittivitynanocomposite gate insulators based on nanoparticles, surface-modified with a phosphonic acid, in poly(4-vinylphenol) for organic field-effect transistors. The use of surface-modified nanoparticles affords high quality nanocomposite thin films at large nanoparticle volume fractions (up to ) with a large capacitance density and a low leakage current. The fabricated pentacene field-effect transistors using these nanocomposites show a large on/off current ratio ( ) due to the high capacitance density and small leakage current of the gate insulator.
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