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Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics
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Figures

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FIG. 1.

(a) Water droplets on (left) and on (right). (b) Current density vs bias voltage for diodes fabricated with untreated Al electrodes (triangles), oxidized bottom electrode (circles) and ODPA functionalised bottom electrode (squares). Inset: molecular structure of ODPA.

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FIG. 2.

(a) Chemical structure of the molecules studied. (b) Wetting envelopes for the surface with coordinates of liquid surface energy components of semiconductor solutions plotted (symbols).

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FIG. 3.

Transfer (a) and output (b) curves for a representative F17-DOPF based OFET with channel length and width of , and , respectively. Inset: schematic of the OFET architecture employed.

Tables

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Table I.

Summary of material properties and device characteristics. All measurements were performed using chlorobenzene solutions except triisopropylsilyl-pentacene (TIPS-pentacene) which was measured using a tetralin solution.

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2008-07-08
2014-04-20

Abstract

Reduction in the operating voltage of organic transistors is of high importance for successful implementation in low-power electronic applications. Here we report on low-voltage -channel transistors fabricated employing a combination of soluble organic semiconductors and a self-assembled gate dielectric. The high geometric capacitance of the nanodielectric allows transistor operation below . Solution processing is enabled by analysis of the surface energy compatibility of the dielectric and semiconductorsolutions. Electron mobilities in the range of and threshold voltages are demonstrated. The present work paves the way toward solution processable low-voltage/power, organic complementary circuits.

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Scitation: Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/1/10.1063/1.2954015
10.1063/1.2954015
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