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AES spectra from two films grown by PLD and DIBS.
The cell size of films, of TaN and TiN (Ref. 17), along with results from GGA and LSDA calculations. Inset: the relative intensity of the pattern over the and AES patterns, which is proportional to the [Ar] content in the films, and the fraction of BS Ar calculated by SRIM.
Total valence charge density for the (010), (100), and (110) planes. [(a) and (b)] , (c) and (d) . Red (blue) indicates positive (negative) values.
Dielectric function spectra of representative films.
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