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Conducting transition metal nitride thin films with tailored cell sizes: The case of
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10.1063/1.2955838
/content/aip/journal/apl/93/1/10.1063/1.2955838
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/1/10.1063/1.2955838
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Figures

Image of FIG. 1.
FIG. 1.

AES spectra from two films grown by PLD and DIBS.

Image of FIG. 2.
FIG. 2.

The cell size of films, of TaN and TiN (Ref. 17), along with results from GGA and LSDA calculations. Inset: the relative intensity of the pattern over the and AES patterns, which is proportional to the [Ar] content in the films, and the fraction of BS Ar calculated by SRIM.

Image of FIG. 3.
FIG. 3.

Total valence charge density for the (010), (100), and (110) planes. [(a) and (b)] , (c) and (d) . Red (blue) indicates positive (negative) values.

Image of FIG. 4.
FIG. 4.

Dielectric function spectra of representative films.

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/content/aip/journal/apl/93/1/10.1063/1.2955838
2008-07-07
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Conducting transition metal nitride thin films with tailored cell sizes: The case of δ-TixTa1−xN
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/1/10.1063/1.2955838
10.1063/1.2955838
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