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Temperature rise as a function of modulated frequency at for the correlated and uncorrelated Ge QDSL and the reference sample.
(a) Measured thermal conductivity as a function of temperature for sample 52 with vertically aligned dots (solid blue symbols) and without vertical correlation (open red symbols). Also shown are results of calculations using the extended Fourier heat transport equation (solid line). The inset shows sketches of the QDSL nanostructures with and without vertical correlation. Black squares represent the Ge dots, whereas gray regions correspond to the Ge wetting layer. White regions represent the Si spacer. (b) Measured Raman spectra (Ref. 14) of the corresponding samples in (a).
Main characteristics of the MBE samples.
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