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Schematic of the generation rate , excess carrier density , and image acquisition during one measurement period of length . The fourth image is used for background subtraction.
Relationship between lifetime and phase for image acquisition times of 300, 1100, and . Over a wide range of lifetimes a nearly linear relationship is observed.
(a) Dynamic-ILM image of a mc-Si wafer with SiN passivation. Data acquisition time was 1 s. (b) MW-PCD lifetime mapping of the same sample. Data acquisition time was 20 min. The white lines mark the linescans used for a quantitative comparison.
Comparison of the linescans shown as white lines in Figs. 3(b) and 3(d). Both lifetime measurements agree very well. It can be seen that the dynamic-ILM results are blurred compared to the MW-PCD measurement.
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