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Dynamic carrier lifetime imaging of silicon wafers using an infrared-camera-based approach
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10.1063/1.2972122
/content/aip/journal/apl/93/10/10.1063/1.2972122
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2972122
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the generation rate , excess carrier density , and image acquisition during one measurement period of length . The fourth image is used for background subtraction.

Image of FIG. 2.
FIG. 2.

Relationship between lifetime and phase for image acquisition times of 300, 1100, and . Over a wide range of lifetimes a nearly linear relationship is observed.

Image of FIG. 3.
FIG. 3.

(a) Dynamic-ILM image of a mc-Si wafer with SiN passivation. Data acquisition time was 1 s. (b) MW-PCD lifetime mapping of the same sample. Data acquisition time was 20 min. The white lines mark the linescans used for a quantitative comparison.

Image of FIG. 4.
FIG. 4.

Comparison of the linescans shown as white lines in Figs. 3(b) and 3(d). Both lifetime measurements agree very well. It can be seen that the dynamic-ILM results are blurred compared to the MW-PCD measurement.

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/content/aip/journal/apl/93/10/10.1063/1.2972122
2008-09-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dynamic carrier lifetime imaging of silicon wafers using an infrared-camera-based approach
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2972122
10.1063/1.2972122
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