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Electrical spectroscopy of high resistivity ion-implanted layers by current-voltage measurements
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10.1063/1.2975372
/content/aip/journal/apl/93/10/10.1063/1.2975372
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2975372

Figures

Image of FIG. 1.
FIG. 1.

Room temperature characteristics of two samples, 300 keV, Fe-implanted InP (black circles) and 190 keV, Fe-implanted GaInP (white circles), annealed at and , respectively.

Image of FIG. 2.
FIG. 2.

DOS obtained from the analysis of the room temperature characteristics of 300 keV, Fe-implanted InP samples annealed for 60 min at the different temperatures reported in the legend.

Image of FIG. 3.
FIG. 3.

DOS obtained from the analysis of the room temperature characteristics of 190 keV, Fe-implanted GaInP samples annealed for 60 min at the different temperatures reported in the legend.

Tables

Generic image for table
Table I.

Free carrier concentration, free carrier fraction, and trap energy levels obtained from the analysis of curves of Fe-implanted InP and GaInP layers.

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/content/aip/journal/apl/93/10/10.1063/1.2975372
2008-09-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical spectroscopy of high resistivity ion-implanted layers by current-voltage measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2975372
10.1063/1.2975372
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