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(circles) and (triangles) as a function of temperature (normalized at 70 K). The inset shows the sublinear current dependence of and the facet emission showing threshold (vertical dotted line) at 80 K.
The measured temperature dependence of slope efficiency yields a value of in the low range and 32 K at higher . The inset shows typical curves at several temperatures.
Measured pressure dependence of the lasing energy (squares) for GaNAsP SQW lasers. Also shown is the pressure dependence of (dotted-dashed line). The nitrogen level (dashed line) position was determined by interpolation of isolated level in GaAs and GaP and assumed negligible movement with pressure. The change in lasing energy with pressure can be predicted using the BAC model (solid line).
Measured pressure dependence of and for the GaNAsP devices, at 100 K, normalized at atmospheric pressure.
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