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Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers
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10.1063/1.2975845
/content/aip/journal/apl/93/10/10.1063/1.2975845
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2975845
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(circles) and (triangles) as a function of temperature (normalized at 70 K). The inset shows the sublinear current dependence of and the facet emission showing threshold (vertical dotted line) at 80 K.

Image of FIG. 2.
FIG. 2.

The measured temperature dependence of slope efficiency yields a value of in the low range and 32 K at higher . The inset shows typical curves at several temperatures.

Image of FIG. 3.
FIG. 3.

Measured pressure dependence of the lasing energy (squares) for GaNAsP SQW lasers. Also shown is the pressure dependence of (dotted-dashed line). The nitrogen level (dashed line) position was determined by interpolation of isolated level in GaAs and GaP and assumed negligible movement with pressure. The change in lasing energy with pressure can be predicted using the BAC model (solid line).

Image of FIG. 4.
FIG. 4.

Measured pressure dependence of and for the GaNAsP devices, at 100 K, normalized at atmospheric pressure.

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/content/aip/journal/apl/93/10/10.1063/1.2975845
2008-09-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2975845
10.1063/1.2975845
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