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Strain dependence of indirect band gap for strained silicon on insulator wafers
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10.1063/1.2978241
/content/aip/journal/apl/93/10/10.1063/1.2978241
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2978241
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra of thin sSi layers (sSi20, sSi30, and sSi40 samples) as well as bulk Si under UV resonant excitation (363 nm).

Image of FIG. 2.
FIG. 2.

LTPL spectra of thin sSi layers (sSi20, sSi30, and sSi40 samples) as well as bulk Si under UV excitation (363 nm).

Image of FIG. 3.
FIG. 3.

TO assisted transition PL peaks integrated intensity as a function of the laser power excitation for the different sSi layers (sSi20, sSi30, and sSi40 samples).

Image of FIG. 4.
FIG. 4.

Comparison of the experimental and theoretical strain dependences of sSi indirect band gap at low temperature.

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/content/aip/journal/apl/93/10/10.1063/1.2978241
2008-09-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain dependence of indirect band gap for strained silicon on insulator wafers
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2978241
10.1063/1.2978241
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