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Transmission spectra of the emitters for different substrate materials: GaInAsN (blue) and GaInAsN with AlGaAs heterostructure (red).
Terahertz signal and photocurrent vs excitation wavelength (black squares and red triangles, respectively) of the GaInAsN device with AlGaAs heterostructure at a 25 mW excitation power.
Terahertz spectrum obtained by Fourier transformation of time-domain data as shown in the inset. The emitter was excited at and 50 mW average power.
(a) Terahertz transient of a SI-GaAs emitter (black dotted) in comparison to a GaInAsN/AlGaAs emitter (red solid) excited at 800 nm. The inset shows the Fourier transformed spectra obtained from time-domain data. (b) Terahertz field from the GaInAsN/AlGaAs emitter as a function of excitation power for 800, 1250, and 1350 nm (red triangles, black squares, and blue circles respectively). Solid lines are fits to the experimental data. The inset shows higher optical excitation powers reached at 800 nm.
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