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(a) SEM image of GaAs/InAs NW heterostructures (3 min grown GaAs) grown on a GaAs (111)B substrate; (b) and (c) are STEM image of a GaAs/InAs NW heterostructure (3 min grown GaAs) and its corresponding EDS line scan at the interface region respectively.
(a) and (b) are TEM image of a GaAs/InAs NW heterostructure (3 min grown GaAs) and HRTEM image at the GaAs/InAs interface region respectively. (c) HRTEM image showing the significant reduction in stacking faults in the GaAs NW section. (d) FFT image taken at the interface region and the inset shows a magnified image of some of diffraction spots. (e) Plot of lattice misfit between the lattice spacings along the GaAs/InAs interface.
(a) TEM image of tip region of an InAs/GaAs NW (1 min InAs grown on GaAs NW), and (b) is the corresponding HRTEM image of the InAs/GaAs interface region with its FFT image in (c). (d)–(f) are the EDS spot analyses of Au particles at different stages of GaAs/InAs NWs growth: (d) no GaAs growth, (e) and (f) after GaAs NWs growth for 3 and 30 min, respectively.
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