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Schematics of the HEMT structures consisting of (a) planar gate, (b) recessed gate with regrowth, (c) recessed source/drain, and (d) recessed gate with regrowth and recessed drain/source.
(a) Schematic of regrowth process, (b) bright field image of cross-sectional transmission electron microscopy, and (c) high-resolution images of the regrown polycrystalline layers on mask (the inset shows a fast fourier transform image).
Auger electron spectroscopy depth profile of the as-deposited contacts on .
The curves of HEMT-A, -B, -C, and -D measured for the metal pads with a gap spacing of . The Inset shows curves of HEMT-A and -B.
(a) The characteristics and (b) the transconductance characteristics of the recessed gate with a regrowth and recessed drain/source (HEMT-D) with gate length and width.
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