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Ti-based nonalloyed Ohmic contacts for high electron mobility transistors using regrown by plasma assisted molecular beam epitaxy
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10.1063/1.2979702
/content/aip/journal/apl/93/10/10.1063/1.2979702
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2979702
/content/aip/journal/apl/93/10/10.1063/1.2979702
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/content/aip/journal/apl/93/10/10.1063/1.2979702
2008-09-08
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ti-based nonalloyed Ohmic contacts for Al0.15Ga0.85N∕GaN high electron mobility transistors using regrown n+-GaN by plasma assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2979702
10.1063/1.2979702
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