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Ti-based nonalloyed Ohmic contacts for high electron mobility transistors using regrown by plasma assisted molecular beam epitaxy
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10.1063/1.2979702
/content/aip/journal/apl/93/10/10.1063/1.2979702
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2979702
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematics of the HEMT structures consisting of (a) planar gate, (b) recessed gate with regrowth, (c) recessed source/drain, and (d) recessed gate with regrowth and recessed drain/source.

Image of FIG. 2.
FIG. 2.

(a) Schematic of regrowth process, (b) bright field image of cross-sectional transmission electron microscopy, and (c) high-resolution images of the regrown polycrystalline layers on mask (the inset shows a fast fourier transform image).

Image of FIG. 3.
FIG. 3.

Auger electron spectroscopy depth profile of the as-deposited contacts on .

Image of FIG. 4.
FIG. 4.

The curves of HEMT-A, -B, -C, and -D measured for the metal pads with a gap spacing of . The Inset shows curves of HEMT-A and -B.

Image of FIG. 5.
FIG. 5.

(a) The characteristics and (b) the transconductance characteristics of the recessed gate with a regrowth and recessed drain/source (HEMT-D) with gate length and width.

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/content/aip/journal/apl/93/10/10.1063/1.2979702
2008-09-08
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ti-based nonalloyed Ohmic contacts for Al0.15Ga0.85N∕GaN high electron mobility transistors using regrown n+-GaN by plasma assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2979702
10.1063/1.2979702
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