1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Vacancy formation during oxidation of silicon crystal surface
Rent:
Rent this article for
USD
10.1063/1.2979708
/content/aip/journal/apl/93/10/10.1063/1.2979708
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2979708
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dependence of peak intensity on oxidation time. The numbers are the oxidation temperature.

Image of FIG. 2.
FIG. 2.

Dependence of the degree of supersaturation of vacancies on the oxidation time. The numbers are the oxidation temperature.

Image of FIG. 3.
FIG. 3.

Dependence of peak intensity on the oxidation time. Solid and dashed lines cited from Fig. 1 correspond to the oxidation temperatures of 1325 and , respectively. The triangles, squares, and circles correspond to the preoxidized film thicknesses of 0.6, 1.1, and , respectively. Solid and open symbols show the results of 1325 and oxidation, respectively.

Loading

Article metrics loading...

/content/aip/journal/apl/93/10/10.1063/1.2979708
2008-09-08
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vacancy formation during oxidation of silicon crystal surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2979708
10.1063/1.2979708
SEARCH_EXPAND_ITEM