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Enhanced electroluminescence intensity of multi-quantum-wells based on Mg-doped GaN annealed in
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10.1063/1.2980032
/content/aip/journal/apl/93/10/10.1063/1.2980032
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2980032
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The schematic plot for the ionization of acceptor Mg in the presence of an impurity band above the VBM of GaN.

Image of FIG. 2.
FIG. 2.

High-resolution TEM images with different magnifications of the MQWs.

Image of FIG. 3.
FIG. 3.

The EL spectra of blue LEDs at a forward current of with different thicknesses of -type GaN before and after annealed in .

Image of FIG. 4.
FIG. 4.

The EL spectra of blue InGaN LED with a -thick -type layer annealed in different ambients measured at a forward current of .

Image of FIG. 5.
FIG. 5.

Calculated total DOS for supercells of pure GaN, and GaN containing passivated (Mg, O) complexes.

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/content/aip/journal/apl/93/10/10.1063/1.2980032
2008-09-11
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced electroluminescence intensity of InGaN∕GaN multi-quantum-wells based on Mg-doped GaN annealed in O2
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2980032
10.1063/1.2980032
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