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Visualization and investigation of Si–C covalent bonding of single carbon nanotube grown on silicon substrate
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10.1063/1.2980402
/content/aip/journal/apl/93/10/10.1063/1.2980402
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2980402
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image showing an area of interest. Raman bands belonging to Si–C bonds can be detected on the CNT indicated by the dashed curve in red. (b) Comparison of Raman spectra obtained on normal CNTs (black spectrum), on the special CNT (red spectrum), and on bulk crystalline SiC (blue spectrum). The dotted lines represent the CNT peak positions at the band, band, and band.

Image of FIG. 2.
FIG. 2.

Raman images constructed using peak intensity of (a) band of CNTs, (b) band I of Si–C at , (c) band II of Si–C at , (d) band III at , and (e) band IV at . The green arrow indicates the polarization of the incident laser. The blue dotted curves indicate the position and shape of the special CNT.

Image of FIG. 3.
FIG. 3.

Polarized Raman spectra on the special CNT. Inset is the schematic of the configuration of the experiment.

Image of FIG. 4.
FIG. 4.

Raman imaging with different incident polarization: (a) horizontal and (b) perpendicular. The blue dotted curves indicate the position and shape of the CNTs with Si–C bonds.

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/content/aip/journal/apl/93/10/10.1063/1.2980402
2008-09-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Visualization and investigation of Si–C covalent bonding of single carbon nanotube grown on silicon substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2980402
10.1063/1.2980402
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