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(a) 3D AFM images showing the shape of a hole initially deep, wide, before deoxidation, after H-assisted deoxidation, and after Ga-assisted deoxidation for different amounts of Ga supplied. (b) Line profiles (averaged over ten holes) through the hole center in the  and directions for the different treatments. The initial hole shape was slightly elongated in the direction.
3D AFM image of an ordered array of dots on a spaced pattern. The inset shows a nominally wide hole after deoxidation and GaAs buffer. The hole is now wide in the  direction with a “figure of eight” shape. This leads to many sites being occupied by two dots, one over each half of the figure of eight, spaced apart.
(a) Schematic of the initial etched pattern consisting of a array of small holes spaced apart surrounded by wide trenches for alignment purposes. (b) Integrated PL intensity map (integration range of ) of capped InAs dots grown over the etched pattern. [(c) and (d)] AFM height images of the GaAs surface above a patterned site where high mounds indicate the occupancy of the site, showing (c) one site-controlled dot and (d) a pair of site-controlled dots.
Power dependence of the luminescence from site-controlled dots. (a) and (c) show emission from a single dot shown in Fig. 3(c). (b) and (d) show emission from a pair of dots shown in Fig. 3(d). Emission from the exciton is labeled as X, biexciton as XX, and excited states as P and D. The excitation power dependence of the exciton and biexciton intensity can be fitted by a power law , where the values of are shown in (c) and (d).
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