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Strain engineered resonant interband tunneling diodes with outside barriers grown on virtual substrates
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10.1063/1.2981211
/content/aip/journal/apl/93/10/10.1063/1.2981211
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2981211
/content/aip/journal/apl/93/10/10.1063/1.2981211
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/content/aip/journal/apl/93/10/10.1063/1.2981211
2008-09-11
2014-11-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain engineered Si∕SiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2981211
10.1063/1.2981211
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