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Kinetic Monte Carlo study of metal organic chemical vapor deposition growth mechanism of GaSb quantum dots
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10.1063/1.2981515
/content/aip/journal/apl/93/10/10.1063/1.2981515
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2981515

Figures

Image of FIG. 1.
FIG. 1.

Atomic rearrangements accompanying the five surface reactions listed in Table I.

Image of FIG. 2.
FIG. 2.

Temporal development of the growth rate as a function of simulated growth time. The inset adopts linear scales.

Image of FIG. 3.
FIG. 3.

(a) Temporal development of RMS as a function of average coverage; (b) MR development.

Image of FIG. 4.
FIG. 4.

(a) Surface contour at . (b) Local surface contour. (c) Local strain energy distribution. .

Image of FIG. 5.
FIG. 5.

Statistics of the spatial separation between adjacent atomic layers along the axis.

Tables

Generic image for table
Table I.

Heterogeneous reactions and rate parameters Ref. 7 for the TEG/TMSb model. denotes a surface species adsorbed on either Ga site or Sb site . is in kcal/mol. Superscripts (1) and (2) denote the first- and second-order reactions. For the first-order reaction, is in unit of , while for the second-order reaction, it is .

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/content/aip/journal/apl/93/10/10.1063/1.2981515
2008-09-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Kinetic Monte Carlo study of metal organic chemical vapor deposition growth mechanism of GaSb quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2981515
10.1063/1.2981515
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