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Atomic rearrangements accompanying the five surface reactions listed in Table I.
Temporal development of the growth rate as a function of simulated growth time. The inset adopts linear scales.
(a) Temporal development of RMS as a function of average coverage; (b) MR development.
(a) Surface contour at . (b) Local surface contour. (c) Local strain energy distribution. .
Statistics of the spatial separation between adjacent atomic layers along the axis.
Heterogeneous reactions and rate parameters Ref. 7 for the TEG/TMSb model. denotes a surface species adsorbed on either Ga site or Sb site . is in kcal/mol. Superscripts (1) and (2) denote the first- and second-order reactions. For the first-order reaction, is in unit of , while for the second-order reaction, it is .
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