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Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss
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10.1063/1.2981522
/content/aip/journal/apl/93/10/10.1063/1.2981522
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2981522
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM picture of a Ge sample annealed for 30 min at showing a 116 nm step between capped and uncapped areas.

Image of FIG. 2.
FIG. 2.

(a) Ge loss depth vs annealing temperature and time. (b) Ge loss rate as a function of temperature.

Image of FIG. 3.
FIG. 3.

P experimental and simulated profiles for uncapped Ge, implanted with a dose of and energies of (a) 50 and (b) 150 keV after annealing at .

Image of FIG. 4.
FIG. 4.

P profiles after high dose implantation and subsequent annealing for 2 h at in capped and uncapped Ge substrates.

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/content/aip/journal/apl/93/10/10.1063/1.2981522
2008-09-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/10/10.1063/1.2981522
10.1063/1.2981522
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