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AFM picture of a Ge sample annealed for 30 min at showing a 116 nm step between capped and uncapped areas.
(a) Ge loss depth vs annealing temperature and time. (b) Ge loss rate as a function of temperature.
P experimental and simulated profiles for uncapped Ge, implanted with a dose of and energies of (a) 50 and (b) 150 keV after annealing at .
P profiles after high dose implantation and subsequent annealing for 2 h at in capped and uncapped Ge substrates.
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