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XRD spectra of -doped ZnO (a) before and (b) after rapid thermal annealing at for in an ambient. The insets show magnified (0002) diffraction peaks of P-doped ZnO films.
SIMS depth profile of P-dopant atoms in P-doped ZnO before and after rapid thermal annealing at for in an ambient.
Cross-sectional HR-TEM images of -doped ZnO (a) before and (b) after annealing at . The insets show the corresponding electron diffraction pattern. (c) HR-TEM image of the region around the interface of -type ZnO (top) and -type ZnO (bottom).
(a) Fourier-filtered HR-TEM image of the area inside the square region of Fig. 3(b). The arrows indicate partial dislocations associated with stacking faults. (b) Magnified image of a partial dislocation around a stacking fault shown in the square region in (a).
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