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Microstructural properties of phosphorus-doped -type ZnO grown by radio-frequency magnetron sputtering
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10.1063/1.2936962
/content/aip/journal/apl/93/11/10.1063/1.2936962
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2936962
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD spectra of -doped ZnO (a) before and (b) after rapid thermal annealing at for in an ambient. The insets show magnified (0002) diffraction peaks of P-doped ZnO films.

Image of FIG. 2.
FIG. 2.

SIMS depth profile of P-dopant atoms in P-doped ZnO before and after rapid thermal annealing at for in an ambient.

Image of FIG. 3.
FIG. 3.

Cross-sectional HR-TEM images of -doped ZnO (a) before and (b) after annealing at . The insets show the corresponding electron diffraction pattern. (c) HR-TEM image of the region around the interface of -type ZnO (top) and -type ZnO (bottom).

Image of FIG. 4.
FIG. 4.

(a) Fourier-filtered HR-TEM image of the area inside the square region of Fig. 3(b). The arrows indicate partial dislocations associated with stacking faults. (b) Magnified image of a partial dislocation around a stacking fault shown in the square region in (a).

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/content/aip/journal/apl/93/11/10.1063/1.2936962
2008-09-18
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microstructural properties of phosphorus-doped p-type ZnO grown by radio-frequency magnetron sputtering
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2936962
10.1063/1.2936962
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