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Interband and intersubband optical characterization of semipolar -oriented GaN/AlN multiple-quantum-well structures
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10.1063/1.2978250
/content/aip/journal/apl/93/11/10.1063/1.2978250
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2978250
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Figures

Image of FIG. 1.
FIG. 1.

XRD scan of -oriented GaN/AlN (2.5 nm/5 nm) MQWs, recorded around the axis, i.e., the axis. In the inset, cross-section high-resolution transmission electron microscopy image of -oriented GaN/AlN (3 nm/5 nm) MQWs taken along the axis of the layer.

Image of FIG. 2.
FIG. 2.

Low-temperature PL spectra from polar and semipolar GaN/AlN MQWs with 5-nm-thick AlN barriers and various QW thicknesses. In the inset, PL extinction measured on polar and semipolar GaN/AlN (3 nm/5 nm) MQWs.

Image of FIG. 3.
FIG. 3.

Top: band diagram of (0001)- and -oriented GaN/AlN (2.5 nm/5 nm) MQWs assuming the structure is fully strained on AlN and on GaN. Down: evolution of as a function of the QW thickness and strain state. The dots correspond to the experimental measurements.

Image of FIG. 4.
FIG. 4.

Room-temperature PIA spectra for TM-polarized light measured in -oriented GaN/AlN MQWs with 3-nm-thick AlN barriers and GaN QWs with thicknesses of 2 and 2.5 nm. Inset: calculated ISB energy for semipolar and polar structures. The dots correspond to the experimental measurements.

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/content/aip/journal/apl/93/11/10.1063/1.2978250
2008-09-18
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2978250
10.1063/1.2978250
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