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XRD scan of -oriented GaN/AlN (2.5 nm/5 nm) MQWs, recorded around the axis, i.e., the axis. In the inset, cross-section high-resolution transmission electron microscopy image of -oriented GaN/AlN (3 nm/5 nm) MQWs taken along the axis of the layer.
Low-temperature PL spectra from polar and semipolar GaN/AlN MQWs with 5-nm-thick AlN barriers and various QW thicknesses. In the inset, PL extinction measured on polar and semipolar GaN/AlN (3 nm/5 nm) MQWs.
Top: band diagram of (0001)- and -oriented GaN/AlN (2.5 nm/5 nm) MQWs assuming the structure is fully strained on AlN and on GaN. Down: evolution of as a function of the QW thickness and strain state. The dots correspond to the experimental measurements.
Room-temperature PIA spectra for TM-polarized light measured in -oriented GaN/AlN MQWs with 3-nm-thick AlN barriers and GaN QWs with thicknesses of 2 and 2.5 nm. Inset: calculated ISB energy for semipolar and polar structures. The dots correspond to the experimental measurements.
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