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Impact of channel constrictions on the formation of multiple tunnel junctions in heavily doped silicon single electron transistors
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10.1063/1.2980028
/content/aip/journal/apl/93/11/10.1063/1.2980028
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2980028
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of the fabricated SET structure; (b) device A dot region, scale bar: ; (c) device B dot region, scale bar: ; (d) device C dot region, scale bar: .

Image of FIG. 2.
FIG. 2.

Device A measurement results: (a) differential conductance gray-scale plot as a function of and with at . (b) Drain current gray-scale plot as a function of and with , at . (c) Drain current plot as function of at various temperatures for , and . (d) Differential conductance gray-scale plot as a function of and with at .

Image of FIG. 3.
FIG. 3.

(a) Differential conductance gray-scale plot of device B as a function of and with at . (b) Drain current of device C as a function of and with at . varies from (top) to (bottom).

Image of FIG. 4.
FIG. 4.

(a) Drain current as a function of for the drain voltages from (top) to (bottom) with at for device C. (b) Gray-scale plot of device C drain current as a function of and at with , . Vertical lines are due to the artifacts of the measurement system.

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/content/aip/journal/apl/93/11/10.1063/1.2980028
2008-09-16
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of channel constrictions on the formation of multiple tunnel junctions in heavily doped silicon single electron transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2980028
10.1063/1.2980028
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