banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Valley splitting in Si quantum dots embedded in SiGe
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

Placement of Si (yellow, light) and Ge (blue, dark) atoms in (a) fully ordered (Si–Ge and Si–Si bonds) and (b) partially ordered (Si–Ge, Ge–Ge, and Si–Si bonds) eight-atom supercells.

Image of FIG. 2.
FIG. 2.

Energy levels in Si dot embedded in ordered buffer. Energies are referenced to the valence band point. Inserts show spatial distribution of wave functions for the lowest levels.

Image of FIG. 3.
FIG. 3.

Valley splitting for the lowest orbital level as a function of the dot size for ordered (black), partially ordered (red), and disordered (blue) buffer. Bars indicate standard deviation for each point. An example of valley splitting distribution for 100 realizations of buffer disorder is shown in the histogram for ; blue curve is the Gaussian fit.

Image of FIG. 4.
FIG. 4.

Valley splitting for the lowest orbital level of Si dot as a function of the dot thickness in monolayers. is calculated using . Thin line connects points with 1 ML step, thick lines connect points for even (open dots) and odd (solid dots) monolayers. Bars indicate standard deviations for different disorder realizations. In the inset for ordered and disordered buffers are plotted. Dashed line is obtained analytically for the 2D case. Stars show percent of the wave function penetrating into the buffer in -direction (right scale).


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Valley splitting in Si quantum dots embedded in SiGe