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Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode
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10.1063/1.2982426
/content/aip/journal/apl/93/11/10.1063/1.2982426
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2982426
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TEM images for (a) the Pt(BE)/CoO interface in PCT and (b) Ta(BE)/CoO interface in TCP. The arrows in (b) represent the intermediate layer including Ta oxide.

Image of FIG. 2.
FIG. 2.

Time evolution of the transient current during the forming process in PCP with the electrode area of . The inset is the corresponding curves. The blue and red curves correspond to forming with CC (1 mA) and , respectively. and indicated by a blue open triangle and red open circle are the maximum transient current with CC and LR, respectively.

Image of FIG. 3.
FIG. 3.

curves in (a) the forming process with LR and (b) reset process in TCP with the electrode area of . The blue and red curves correspond to and , respectively. A1 and A2 in (a) are the maximum current in the forming process with LR, while B1 and B2 in (b) are the maximum current in the reset process.

Image of FIG. 4.
FIG. 4.

The relation between and with LR in PCP, PCT, and TCP with the electrode area of .

Image of FIG. 5.
FIG. 5.

The current at 0.2 V in the 100 times resistance switching by the pulse voltage for (a) TCP and (b) PCT with the electrode area of . The reset and set pulses were and for TCP, respectively. The reset and set pulses were and for PCT, respectively.

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/content/aip/journal/apl/93/11/10.1063/1.2982426
2008-09-18
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2982426
10.1063/1.2982426
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