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High photocurrent gain in nanowires
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10.1063/1.2987422
/content/aip/journal/apl/93/11/10.1063/1.2987422
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2987422
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The SEM image of the as-grown nanowires. (b) XRD pattern of the as-grown nanowires. (c) The SEM image of the single nanowire device. (d) characteristics of the nanowire device in the atmosphere.

Image of FIG. 2.
FIG. 2.

A typical photoresponse of a single nanowire in the atmosphere with 0.1 V applied bias under the illumination of 325 nm wavelength and excitation intensity of .

Image of FIG. 3.
FIG. 3.

(a) Photoconductive gain and carrier lifetime and (b) the corresponding PC of a single nanowire as a function of illumination intensity.

Image of FIG. 4.
FIG. 4.

(a) A typical photoresponse of a single nanowire in the vacuum with 0.1 V applied bias under the illumination of 325 nm wavelength and excitation intensity of . (b) Photoconductive gain of a single nanowire as a function of illumination intensity in the vacuum.

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/content/aip/journal/apl/93/11/10.1063/1.2987422
2008-09-19
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High photocurrent gain in SnO2 nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2987422
10.1063/1.2987422
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