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Bright field images of a GaN/AlN/sapphire cross section. (a) General view with the sapphire surface arrowed; [(b)–(d)] images of boxed region with line defects arrowed. (b) and (c) show 0002 diffraction contours in nanorods 1 and 2 and are relatively rotated by about a vertical axis. (d) is tilted a few degrees from (c) to excite in nanorod 1.
Bright field images of (a) a nanorod with more than one fault, imaged in a Philips CM20 TEM at 200 kV. The blow-up shows the interaction of one bounding dislocation with a bend contour (digitally enhanced) along with a schematic of the contrast expected when ; (b) a fault with an edge-on void (arrowed) over a part of its length.
(a) Schematic showing a fault with partials A and B terminating at the growth surface (top view). Adatoms attach to the ledge 1, causing it to spiral about A and B with intermediate positions 1–4. (b) A nanorod with an edge-on fault showing different facet angles. (c) Schematic suggesting how vicinal surfaces can arise by step flow across a crystallographic facet (dotted lines).
Dark field image in showing a fault with bounding dislocations converging to a point close to the sapphire surface.
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