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Comparison of -type and -type GaAs oxide growth and its effects on frequency dispersion characteristics
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10.1063/1.2987428
/content/aip/journal/apl/93/11/10.1063/1.2987428
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2987428
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS data of (a) , (b) , and (c) spectra for - and -type GaAs surfaces after chemical treatment, 12 min atmospheric and fluorescent lighting exposure, and 1 nm deposition.

Image of FIG. 2.
FIG. 2.

XPS data of (a) , (b) , and (c) spectra for - and -type GaAs surfaces after chemical treatment, 5 min atmospheric and fluorescent lighting exposure, and 1 nm deposition.

Image of FIG. 3.
FIG. 3.

data of the same samples used for XPS analysis showing different (a) -type and (b) -type frequency dispersion characteristics despite having chemically identical gate oxides and interfaces.

Image of FIG. 4.
FIG. 4.

Simulated data using a tunneling modified interface state model. The distribution is the same for both (a) -type and (b) -type simulations as suggested from the XPS data. The simulation differences arise from trap time constant differences for electrons and holes.

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/content/aip/journal/apl/93/11/10.1063/1.2987428
2008-09-19
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2987428
10.1063/1.2987428
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