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Near-infrared absorption of germanium thin films on silicon
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10.1063/1.2987999
/content/aip/journal/apl/93/11/10.1063/1.2987999
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2987999
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Sketch of the experimental setup. Incident, reflected, and transmitted light intensities are measured by photodiodes PD1, PD2, and PD3, respectively.

Image of FIG. 2.
FIG. 2.

Calculated optical absorption vs wavelength from measured intensities using Eq. (1) (solid line) or an exact approach (circles).

Image of FIG. 3.
FIG. 3.

Absorption spectra at temperatures between 27 and (with increments of ).

Image of FIG. 4.
FIG. 4.

Absorption coefficients vs temperature at various wavelengths.

Image of FIG. 5.
FIG. 5.

Calculated direct band-gap energy vs temperature.

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/content/aip/journal/apl/93/11/10.1063/1.2987999
2008-09-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near-infrared absorption of germanium thin films on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/11/10.1063/1.2987999
10.1063/1.2987999
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