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(a) A typical SEM image of boron nanowires on Si (111) substrate. (b) TEM image of a single boron nanowire. The inset is the corresponding SAED pattern that can be indexed to -rhombohedral boron. (c) HRTEM image of boron nanowire. The growth direction is along . (d) A typical EELS spectrum from an individual nanowire.
(a) The characterization of boron nanowire. The inset gives the SEM image of device 1. (b) Temperature dependence of electrical conductivities of four different devices. The indexed numbers of each curve represent the corresponding devices.
(a)–(d) SEM images showing mechanical bending process. (e) The relationship between and temperature . (f) Temperature dependence of conductivities of nanowires with and without mechanical strain.
Model parameter of Mott’s VRH model. The parameters for bulk samples of -rhombohedral B (in Ref. 23) are also shown for comparison.
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