1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K
Rent:
Rent this article for
USD
10.1063/1.2978330
/content/aip/journal/apl/93/12/10.1063/1.2978330
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2978330
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The device structure and band diagram of a superlattice photodiode. While the thicker active region increases the optical efficiency, the barrier and double heterostructure effectively block dark current and limit surface leakage.

Image of FIG. 2.
FIG. 2.

QE of -on- and -on- photodiodes as a function of wavelength. The inset is a model of both configurations as a function of active region thickness.

Image of FIG. 3.
FIG. 3.

-on- design electrical characterization: (a) vs and (b) vs are the electrical performances for a diameter mesa with 77 and 300 K backgrounds. (c) The inverse vs perimeter/area for 25 diodes measured with a 77 K background.

Image of FIG. 4.
FIG. 4.

The left axis is the detectivity at . The right axis is the current density measured at with (full) and without (open) a cold shield. The dashed line is the BLIP performance for an ideal photodiode with FOV with 300 K background.

Loading

Article metrics loading...

/content/aip/journal/apl/93/12/10.1063/1.2978330
2008-09-22
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2978330
10.1063/1.2978330
SEARCH_EXPAND_ITEM