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The device structure and band diagram of a superlattice photodiode. While the thicker active region increases the optical efficiency, the barrier and double heterostructure effectively block dark current and limit surface leakage.
QE of -on- and -on- photodiodes as a function of wavelength. The inset is a model of both configurations as a function of active region thickness.
-on- design electrical characterization: (a) vs and (b) vs are the electrical performances for a diameter mesa with 77 and 300 K backgrounds. (c) The inverse vs perimeter/area for 25 diodes measured with a 77 K background.
The left axis is the detectivity at . The right axis is the current density measured at with (full) and without (open) a cold shield. The dashed line is the BLIP performance for an ideal photodiode with FOV with 300 K background.
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