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Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics
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10.1063/1.2988281
/content/aip/journal/apl/93/12/10.1063/1.2988281
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2988281
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

DCXRD rocking curves from a series of InAsN:Sb epilayers grown at different Sb fluxes.

Image of FIG. 2.
FIG. 2.

Dependence of N composition on ratio (a) and dependence of Sb composition on ratio (b) in InAsN:Sb alloy.

Image of FIG. 3.
FIG. 3.

PL spectra at from InAsN:Sb epilayers and reference samples of InAsN and InAsSb.

Image of FIG. 4.
FIG. 4.

EL spectra from LEDs at using different drive currents.

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/content/aip/journal/apl/93/12/10.1063/1.2988281
2008-09-22
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2988281
10.1063/1.2988281
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