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Laser activation of dopants for nanowire devices on glass and plastic
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View: Figures


Image of FIG. 1.
FIG. 1.

Four-probe resistivity measurements of boron and arsenic doped NWs annealed by green laser light. The inset shows SEM image of the four-probe device structures.

Image of FIG. 2.
FIG. 2.

(a) Image of fabricated NW devices on glass. (b) Representative curves for doped NW resistor devices for laser activated and thermally activated NWs from the middle of the resistance statistical distributions shown. The inset shows representative curves of NW resistor devices fabricated on polyimide coated substrate. (c) Comparative statistical distributions for laser activated and thermally activated NW devices.

Image of FIG. 3.
FIG. 3.

(a) Schematic of process used in fabricating NW transistor devices. (b) Comparison of representative output curves for NW transistors fabricated using laser annealing (solid lines) and thermal annealing (dotted lines) for the implanted source-drain regions. The curves are all normalized to the on-current for the laser annealed device at a source-drain bias of 12 V and a gate bias of . The curves are in decrements of gate bias by 2 V starting at .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Laser activation of dopants for nanowire devices on glass and plastic