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(a) FESEM image of grown ZnO nanowall networks. Inset is a FESEM tilt image of the same ZnO nanowall networks. (b) Cross-sectional HRTEM image of a ZnO nanowall. Inset is the FFT pattern showing the zone axis. (c) Molecular structures of PEDOT (left) and PSS (right). (d) FESEM image of ZnO nanowall networks after spin-coating with PEDOT:PSS.
(a) Schematic diagram of the PEDOT:PSS/ZnO nanowall network heterojunction on a ZnO thin film/GaN/-plane sapphire substrate. (b) Electrical characteristics of a PEDOT:PSS/ZnO nanowall network heterojunction diode. (c) Temperature dependent (log-log scale at forward bias) curves from 303 to 353 K by 10 K step. (d) The power-law parameter obtained from (c) vs .
Reverse recovery characteristics after switching from forward to reverse bias . Left inset shows the reverse current response by a series of pulses. Right inset is a magnified graph in the transition region used to estimate the carrier storage time .
The log-log plot of reverse current variation at a reverse voltage of .
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