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Transient reverse current phenomenon in a heterojunction comprised of poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) and ZnO nanowall
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10.1063/1.2990225
/content/aip/journal/apl/93/12/10.1063/1.2990225
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2990225
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) FESEM image of grown ZnO nanowall networks. Inset is a FESEM tilt image of the same ZnO nanowall networks. (b) Cross-sectional HRTEM image of a ZnO nanowall. Inset is the FFT pattern showing the zone axis. (c) Molecular structures of PEDOT (left) and PSS (right). (d) FESEM image of ZnO nanowall networks after spin-coating with PEDOT:PSS.

Image of FIG. 2.
FIG. 2.

(a) Schematic diagram of the PEDOT:PSS/ZnO nanowall network heterojunction on a ZnO thin film/GaN/-plane sapphire substrate. (b) Electrical characteristics of a PEDOT:PSS/ZnO nanowall network heterojunction diode. (c) Temperature dependent (log-log scale at forward bias) curves from 303 to 353 K by 10 K step. (d) The power-law parameter obtained from (c) vs .

Image of FIG. 3.
FIG. 3.

Reverse recovery characteristics after switching from forward to reverse bias . Left inset shows the reverse current response by a series of pulses. Right inset is a magnified graph in the transition region used to estimate the carrier storage time .

Image of FIG. 4.
FIG. 4.

The log-log plot of reverse current variation at a reverse voltage of .

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/content/aip/journal/apl/93/12/10.1063/1.2990225
2008-09-24
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transient reverse current phenomenon in a p-n heterojunction comprised of poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) and ZnO nanowall
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2990225
10.1063/1.2990225
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