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Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
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10.1063/1.2990657
/content/aip/journal/apl/93/12/10.1063/1.2990657
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2990657
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The evolution of the transfer curves for the (a) PA-passivated and (b) -passivated IGZO transistors as a function of the applied stress time . The variations in the (c) shift and (d) value for the PA-passivated and -passivated IGZO transistors as a function of stress time.

Image of FIG. 2.
FIG. 2.

Dependence of the shift on the gate bias stresses for both devices A and B. For comparison, the effect of the gate bias stress on the unpassivated oxide transistor was also included.

Image of FIG. 3.
FIG. 3.

(a) Schematic showing the electric-field-induced adsorption of oxygen molecules from the ambient atmosphere under the application of PGVS. (b) Schematic showing the electric-field-induced desorption of water molecules into the ambient atmosphere under positive stress.

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/content/aip/journal/apl/93/12/10.1063/1.2990657
2008-09-25
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2990657
10.1063/1.2990657
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