Click to view
(b) TRPL signals at 293 K of the NBE free exciton emission of -plane GaN homoepitaxial film and -plane GaN films grown on -plane FS-GaN and . (c) Effective PL lifetimes and full width at half maximum values at 293 K of the NBE emissions of -plane GaN homoepitaxial films and -plane GaN films grown on as a function of V/III ratio. The epilayers were grown at .
Article metrics loading...
There is no abstract available for this article.
Full text loading...