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Erratum: “Optical properties of nearly stacking-fault-free -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates” [Appl. Phys. Lett.92, 091912 (2008)]
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2008-09-25
2014-09-23

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Scitation: Erratum: “Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates” [Appl. Phys. Lett.92, 091912 (2008)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2991440
10.1063/1.2991440
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