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Erratum: “Optical properties of nearly stacking-fault-free -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates” [Appl. Phys. Lett.92, 091912 (2008)]
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(b) TRPL signals at 293 K of the NBE free exciton emission of -plane GaN homoepitaxial film and -plane GaN films grown on -plane FS-GaN and . (c) Effective PL lifetimes and full width at half maximum values at 293 K of the NBE emissions of -plane GaN homoepitaxial films and -plane GaN films grown on as a function of V/III ratio. The epilayers were grown at .

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/content/aip/journal/apl/93/12/10.1063/1.2991440
2008-09-25
2014-04-24

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Scitation: Erratum: “Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates” [Appl. Phys. Lett.92, 091912 (2008)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2991440
10.1063/1.2991440
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