1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Determination of free carrier density in the low doping regime of by Raman scattering
Rent:
Rent this article for
USD
10.1063/1.2992063
/content/aip/journal/apl/93/12/10.1063/1.2992063
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2992063
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The relative Raman shift is plotted as a function of the free carrier density for bulk, graded doping samples and epitaxial films. The solid line is the curve given by Eq. (1).

Image of FIG. 2.
FIG. 2.

The relative Raman shift is plotted against the carrier density , which is determined from measurements for epitaxial films with carrier concentrations below .

Image of FIG. 3.
FIG. 3.

The damping constant of the LO phonon is plotted as a function of the carrier concentration for graded doping samples (A, B, and C). The TO phonon damping is also shown for sample A.

Loading

Article metrics loading...

/content/aip/journal/apl/93/12/10.1063/1.2992063
2008-09-26
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2992063
10.1063/1.2992063
SEARCH_EXPAND_ITEM