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Experimental setup for the femtosecond pump-terahertz probe measurements.
(a) Relative change in terahertz transmission for various pump powers without bias field. (b) Time-dependent carrier density obtained from Eq. (3). (c) for a series of bias electric fields as the pump beam has an average power of . The insets show (a) the extracted carrier relaxation time as a function of pump power, (b) the maximum-injected carrier density as a function of pump power, and (c) the extracted carrier relaxation time as a function of electric field, respectively.
Scheme of the valence and conduction band structure of GaAs. Electrons are depicted as filled dots.
Pump power dependence of the differential terahertz transmission for a series of bias fields at the delay time of . Curves are, from bottom to top (from largest to smallest transmission change), for the bias field of 0, 3, 5, 7, 9, 11, 13, and . The numbers (0.072, 0.050, and 0.042) indicate the reduction in aroused by electric field at different pump powers (8, 25, and , respectively).
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