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Ultrafast high-field carrier transport in GaAs measured by femtosecond pump-terahertz probe spectroscopy
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10.1063/1.2992067
/content/aip/journal/apl/93/12/10.1063/1.2992067
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2992067
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental setup for the femtosecond pump-terahertz probe measurements.

Image of FIG. 2.
FIG. 2.

(a) Relative change in terahertz transmission for various pump powers without bias field. (b) Time-dependent carrier density obtained from Eq. (3). (c) for a series of bias electric fields as the pump beam has an average power of . The insets show (a) the extracted carrier relaxation time as a function of pump power, (b) the maximum-injected carrier density as a function of pump power, and (c) the extracted carrier relaxation time as a function of electric field, respectively.

Image of FIG. 3.
FIG. 3.

Scheme of the valence and conduction band structure of GaAs. Electrons are depicted as filled dots.

Image of FIG. 4.
FIG. 4.

Pump power dependence of the differential terahertz transmission for a series of bias fields at the delay time of . Curves are, from bottom to top (from largest to smallest transmission change), for the bias field of 0, 3, 5, 7, 9, 11, 13, and . The numbers (0.072, 0.050, and 0.042) indicate the reduction in aroused by electric field at different pump powers (8, 25, and , respectively).

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/content/aip/journal/apl/93/12/10.1063/1.2992067
2008-09-26
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast high-field carrier transport in GaAs measured by femtosecond pump-terahertz probe spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/12/10.1063/1.2992067
10.1063/1.2992067
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