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Enhanced oscillator strength of interband transitions in coupled quantum dots
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10.1063/1.2988469
/content/aip/journal/apl/93/13/10.1063/1.2988469
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2988469
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic picture of a double QD used for simulation.

Image of FIG. 2.
FIG. 2.

The electron-hole wave-function overlap squared for the (black) and (red) hole states. The data are expressed in unit , where is the matrix element for a single QD.

Image of FIG. 3.
FIG. 3.

Spatial distribution of the hole (green) and electron (red) wave functions along the vertical symmetry axis of the dots (the axis) for a single-dot and three selected double-dot structures. As a typical example of the hole states, we depict the HH component calculated using a model. The shaded regions correspond to Ge pyramids and wetting layers. The origin of the horizontal coordinates corresponds to the lower boundary of the lowest Ge wetting layer.

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/content/aip/journal/apl/93/13/10.1063/1.2988469
2008-09-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced oscillator strength of interband transitions in coupled Ge∕Si quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2988469
10.1063/1.2988469
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